The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 04, 2015
Filed:
Sep. 13, 2007
Cem Basceri, Cary, NC (US);
Yuri Khlebnikov, Raleigh, NC (US);
Igor Khlebnikov, Raleigh, NC (US);
Cengiz Balkas, Cary, NC (US);
Murat N. Silan, Morrisville, NC (US);
Hudson Mcd. Hobgood, Pittsboro, NC (US);
Calvin H. Carter, Jr., Durham, NC (US);
Vijay Balakrishna, Cary, NC (US);
Robert T. Leonard, Raleigh, NC (US);
Adrian R. Powell, Cary, NC (US);
Valeri T. Tsvetkov, Gasburg, VA (US);
Jason R. Jenny, Wake Forest, NC (US);
Cem Basceri, Cary, NC (US);
Yuri Khlebnikov, Raleigh, NC (US);
Igor Khlebnikov, Raleigh, NC (US);
Cengiz Balkas, Cary, NC (US);
Murat N. Silan, Morrisville, NC (US);
Hudson McD. Hobgood, Pittsboro, NC (US);
Calvin H. Carter, Jr., Durham, NC (US);
Vijay Balakrishna, Cary, NC (US);
Robert T. Leonard, Raleigh, NC (US);
Adrian R. Powell, Cary, NC (US);
Valeri T. Tsvetkov, Gasburg, VA (US);
Jason R. Jenny, Wake Forest, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
Micropipe-free, single crystal, silicon carbide (SiC) and related methods of manufacture are disclosed. The SiC is grown by placing a source material and seed material on a seed holder in a reaction crucible of the sublimation system, wherein constituent components of the sublimation system including the source material, reaction crucible, and seed holder are substantially free from unintentional impurities. By controlling growth temperature, growth pressure, SiC sublimation flux and composition, and a temperature gradient between the source material and the seed material or the SiC crystal growing on the seed material during the PVT process, micropipe-inducing process instabilities are eliminated and micropipe-free SiC crystal is grown on the seed material.