Morrisville, NC, United States of America

Murat N Silan

USPTO Granted Patents = 2 

 

Average Co-Inventor Count = 12.0

ph-index = 2

Forward Citations = 18(Granted Patents)


Company Filing History:


Years Active: 2013-2015

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2 patents (USPTO):

Title: Murat N Silan: Innovator in Silicon Carbide Technology

Introduction

Murat N Silan is a prominent inventor based in Morrisville, NC (US), known for his significant contributions to the field of silicon carbide technology. With a total of two patents to his name, Silan has made strides in developing methods that enhance the quality and efficiency of silicon carbide production.

Latest Patents

Silan's latest patents focus on the creation of micropipe-free silicon carbide. This innovative method involves growing single crystal silicon carbide (SiC) by utilizing a sublimation system. The process ensures that the source material and seed material are free from unintentional impurities, which is crucial for achieving high-quality SiC crystals. By meticulously controlling various parameters such as growth temperature, growth pressure, and sublimation flux, Silan has successfully eliminated micropipe-inducing instabilities, resulting in superior micropipe-free SiC crystals.

Career Highlights

Murat N Silan is currently associated with Cree GmbH, a company renowned for its advancements in semiconductor technology. His work at Cree has positioned him as a key player in the development of innovative materials that are essential for various applications in electronics and photonics.

Collaborations

Silan has collaborated with notable colleagues, including Cem Basceri and Yuri Khlebnikov. These partnerships have fostered an environment of innovation and have contributed to the successful development of his patented technologies.

Conclusion

Murat N Silan's contributions to silicon carbide technology exemplify the impact of innovative thinking in the field of materials science. His work continues to influence advancements in semiconductor applications, showcasing the importance of research and development in driving technological progress.

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