Gasburg, VA, United States of America

Valeri T Tsvetkov

USPTO Granted Patents = 2 

Average Co-Inventor Count = 12.0

ph-index = 2

Forward Citations = 18(Granted Patents)


Company Filing History:


Years Active: 2013-2015

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2 patents (USPTO):

Title: Inventor Valeri T. Tsvetkov: Pioneering Advances in Silicon Carbide Technology

Introduction

Valeri T. Tsvetkov, an innovative inventor based in Gasburg, VA, has made significant contributions to the field of material science, particularly in the development of micropipe-free silicon carbide (SiC) crystals. With a total of two patents to his name, Tsvetkov’s work is characterized by meticulous engineering and a keen understanding of the sublimation manufacturing process.

Latest Patents

One of Tsvetkov’s prominent patents is focused on micropipe-free silicon carbide and its related method of manufacture. This patent outlines a detailed process whereby SiC is grown using a sublimation system that meticulously excludes unintentional impurities. Key to his method is the management of various parameters, including growth temperature, pressure, and sublimation flux. By carefully controlling the temperature gradient between the source and seed materials, Tsvetkov eliminates micropipe-inducing instabilities, resulting in high-quality SiC crystals.

Career Highlights

Currently, Valeri T. Tsvetkov is associated with Cree GmbH, a company renowned for its cutting-edge developments in silicon carbide and related technologies. His work at Cree has positioned him at the forefront of advancements in this critical area of material science, influencing both industrial applications and research domains.

Collaborations

Throughout his career, Tsvetkov has collaborated with notable colleagues, including Cem Basceri and Yuri Khlebnikov. Such partnerships have played an essential role in enhancing the scope and impact of his inventions, allowing for a cross-pollination of ideas and expertise that enriches the research environment.

Conclusion

Inventor Valeri T. Tsvetkov continues to be a transformative figure in the field of silicon carbide technology. Through his innovative patents and collaborative efforts at Cree GmbH, he is contributing to advancements that may redefine the material's applications in various industries. His dedication to eliminating impurities and enhancing crystal growth processes stands as a testament to the power of innovation in shaping the future of material science.

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