The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2005
Filed:
Oct. 16, 2003
Joseph John Sumakeris, Apex, NC (US);
Hudson Mcdonald Hobgood, Pittsboro, NC (US);
Michael James Paisley, Garner, NC (US);
Jason Ronald Jenny, Raleigh, NC (US);
Calvin H. Carter, Jr., Durham, NC (US);
Valeri Fedorovich Tsvetkov, Durham, NC (US);
Joseph John Sumakeris, Apex, NC (US);
Hudson McDonald Hobgood, Pittsboro, NC (US);
Michael James Paisley, Garner, NC (US);
Jason Ronald Jenny, Raleigh, NC (US);
Calvin H. Carter, Jr., Durham, NC (US);
Valeri Fedorovich Tsvetkov, Durham, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
Methods of forming high voltage silicon carbide power devices utilize high purity silicon carbide drift layers that are derived from high purity silicon carbide wafer material, instead of prohibitively costly epitaxially grown silicon carbide layers. The methods include forming both minority carrier and majority carrier power devices that can support greater than 10 kV blocking voltages, using drift layers having thicknesses greater than about 100 um. The drift layers are formed as boule-grown silicon carbide drift layers having a net n-type dopant concentration therein that is less than about 2×10cm. These n-type dopant concentrations can be achieved using neutron transmutation doping (NTD) techniques.