The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2001
Filed:
Jul. 09, 1998
Ranbir Singh, Cary, NC (US);
Cree Research Inc., Durham, NC (US);
Abstract
Silicon carbide channel semiconductor devices are provided which eliminate the insulator of the gate by utilizing a semiconductor gate layer and buried base regions to create a “pinched off” gate region when no bias is applied to the gate. In particular embodiments of the present invention, the semiconductor devices include a silicon carbide drift layer of a first conductivity type, the silicon carbide drift layer having a first face and having a channel region therein. A buried base region of a second conductivity type semiconductor material is provided in the silicon carbide drift layer so as to define the channel region. A gate layer of a second conductivity type semiconductor material is formed on the first face of the silicon carbide drift layer adjacent the channel region of the silicon carbide drift layer. A gate contact may also be formed on the gate layer. Both transistors and thyristors may be provided.