The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2019
Filed:
Sep. 18, 2017
Applicant:
Cree, Inc., Durham, NC (US);
Inventors:
Alexander V. Suvorov, Durham, NC (US);
Vipindas Pala, Morrisville, NC (US);
Assignee:
Cree, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/16 (2006.01); H01L 21/265 (2006.01); H01L 21/04 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/046 (2013.01); H01L 21/047 (2013.01); H01L 21/26506 (2013.01); H01L 21/26586 (2013.01); H01L 21/324 (2013.01); H01L 29/0619 (2013.01); H01L 29/0688 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/6606 (2013.01); H01L 29/66068 (2013.01); H01L 29/66712 (2013.01); H01L 29/7802 (2013.01); H01L 29/7828 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01);
Abstract
Methods of forming a semiconductor structure include the use of channeled implants into silicon carbide crystals. Some methods include providing a silicon carbide layer having a crystallographic axis, heating the silicon carbide layer to a temperature of about 300° C. or more, implanting dopant ions into the heated silicon carbide layer at an implant angle between a direction of implantation and the crystallographic axis of less than about 2°, and annealing the silicon carbide layer at a time-temperature product of less than about 30,000° C.-hours to activate the implanted ions.