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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10192980 B1

PDFFull Text
Date of Patent:
Jan. 29, 2019

Filed:

Feb. 03, 2017

Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same

Applicant:

Cree, Inc., Durham, NC (US);

Inventors:

Saptharishi Sriram, Cary, NC (US);

Alexander Suvorov, Durham, NC (US);

Christer Hallin, Hillsborough, NC (US);

Assignee:

Cree, Inc., Durham, NC (US);

Attorney:

Baker & Hostetler LLP

Primary Examiner:

Matthew Reames

Assistant Examiner:

John Bodnar

Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/167 (2006.01); H01L 29/423 (2006.01); H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/1075 (2013.01); H01L 29/167 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/42376 (2013.01); H01L 29/66068 (2013.01); H01L 29/66431 (2013.01); H01L 29/7783 (2013.01); H01L 29/402 (2013.01);
Abstract

The disclosure is directed to a high-electron mobility transistor that includes a SiC substrate layer, a GaN buffer layer arranged on the SiC substrate layer, and a p-type material layer having a length parallel to a surface of the SiC substrate layer over which the GaN buffer layer is provided. The p-type material layer is provided in one of the following: the SiC substrate layer and a first layer arranged on the SiC substrate layer. A method of making the high-electron mobility transistor is also disclosed.

Find Patent Forward Citations

Sriram, Saptharishi. (2019). Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same (U.S. Patent No. 10192980). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10192980

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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