Saptharishi Sriram

This inventor holds 48 USPTO granted patents and 2 published patent applications, plus 1 CIPO patent and 16 EPO patents, primarily in GaN Transistor Technology. Top assignees: Cree Gmbh, Wolfspeed, Inc., Macom Technology Solutions Holdings, Inc.. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Saptharishi Sriram. Retrieved from https://idiyas.com/inventor/saptharishi-sriram

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 48 (Patent Applications = 2)

% Patents Active = 100.0

CIPO Patents = 1

EPO Patents = 16 (Patent Applications = 14)

Average Co-Inventor Count = 2.0

ph-index = 8

Forward Citations = 240(Granted Patents)

Location History:

Durham, NC (US) (2022)
Cary, NC (US) (2005 - 2024)

Company Filing History:

Macom Technology Solutions Holdings, Inc.

patents

Years Active: 2005-2026

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Areas of Expertise:

Group III-Nitride

High-Electron Mobility

Transistors

Buried P-Type Layers

Field Effect Transistors

Gallium Nitride

Monolithic Microwave Integrated Circuits

Power Switching

Schottky Diodes

Cascode Structures

Tunnel Junctions

Semiconductor Devices

48 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12557322 - Group III-nitride transistors with back barrier structures and buried p-type layers and methods thereof (2026-02-17),

2. 12484244 - Group III-nitride high-electron mobility transistors with gate connected buried p-type layers and process for making the same (2025-11-25),

3. 12477770 - Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same (2025-11-18),

4. 12402348 - Field effect transistor with selective channel layer doping (2025-08-26),

5. 12402346 - Circuits and group III-nitride transistors with buried p-layers and controlled gate voltages and methods thereof (2025-08-26),

6. 12324179 - Group III-nitride high-electron mobility transistors with a buried metallic conductive material layer and process for making the same (2025-06-03),

7. 12142674 - Gallium Nitride high-electron mobility transistors with p-type layers and process for making the same (2024-11-12),

8. 12034072 - Semiconductor devices having unit cell transistors with smoothed turn-on behavior and improved linearity (2024-07-09),

9. 11929428 - Circuits and group III-nitride high-electron mobility transistors with buried p-type layers improving overload recovery and process for implementing the same (2024-03-12),

10. 11862719 - Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same (2024-01-02),

11. 11658234 - Field effect transistor with enhanced reliability (2023-05-23),

12. 11594628 - Monolithic microwave integrated circuits having both enhancement-mode and depletion mode transistors (2023-02-28),

13. 11476359 - Structures for reducing electron concentration and process for reducing electron concentration (2022-10-18),

14. 11430882 - Gallium nitride high-electron mobility transistors with p-type layers and process for making the same (2022-08-30),

15. 11244831 - Depletion mode semiconductor devices including current dependent resistance (2022-02-08),

Title: Innovations of Saptharishi Sriram in Semiconductor Technologies

Introduction

Saptharishi Sriram, based in Cary, NC, is a prolific inventor with an impressive portfolio of 42 patents. His work primarily focuses on advancements in semiconductor technologies, particularly in high-electron mobility transistors and their associated manufacturing processes.

Latest Patents

Among his latest innovations is a patent for Gallium Nitride high-electron mobility transistors featuring p-type layers. This transistor design incorporates a substrate layer, a first buffer layer, a barrier layer, and necessary electrical components such as the source, drain, and gate, all designed to enhance transistor performance. The inclusion of a p-type material layer, strategically placed within the substrate or first buffer layer, further improves function. This patent not only details the structural components but also outlines a process for manufacturing the high-electron mobility transistor.

Another noteworthy patent involves semiconductor devices characterized by unit cell transistors that display smoothed turn-on behavior and enhanced linearity. This invention features multiple unit cell transistors connected in parallel within a common semiconductor structure, ensuring that the electrical performance of each transistor contributes positively to the overall device.

Career Highlights

Throughout his career, Saptharishi has made significant contributions to the field while working at notable companies like Cree GmbH and Wolfspeed, Inc. His experiences in these organizations have undoubtedly influenced his innovative spirit and dedication to advancing semiconductor technologies.

Collaborations

Saptharishi has collaborated with several talented individuals in the industry, including noted colleagues such as Scott Thomas Sheppard and Fabian Radulescu. These partnerships have likely fostered a creative environment conducive to groundbreaking inventions and patents.

Conclusion

In conclusion, Saptharishi Sriram exemplifies the spirit of innovation in the semiconductor industry. With a substantial number of patents under his belt and ongoing contributions to advanced technologies, his work is expected to significantly shape the future landscape of semiconductor devices.

Profile summary based on public USPTO records.