The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 26, 2025
Filed:
May. 20, 2021
Applicant:
Wolfspeed, Inc., Durham, NC (US);
Inventors:
Assignee:
Wolfspeed, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 21/76 (2006.01); H01L 21/765 (2006.01); H01L 29/20 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H10D 30/4755 (2025.01); H01L 21/7605 (2013.01); H01L 21/765 (2013.01); H10D 30/015 (2025.01); H10D 62/8503 (2025.01); H10D 64/112 (2025.01);
Abstract
A transistor device according to some embodiments includes a channel layer, a barrier layer on the channel layer, and source and drain contacts on the barrier layer, and a gate contact on the barrier layer between the source and drain contacts. The channel layer includes a sub-layer having an increased doping concentration level relative to a remaining portion of the channel layer. The presence of the sub-layer may reduce drain lag without substantially increasing gate lag.