Scott Thomas Sheppard

This inventor holds 108 USPTO granted patents and 21 published patent applications, plus 6 CIPO patents and 34 EPO patents, primarily in RF Amplifiers (CPC class H01L29-2003). Top assignees: Cree Gmbh, Wolfspeed, Inc., Macom Technology Solutions Holdings, Inc.. Active years: 2001-2026.

USPTO Granted Patents = 108 (Patent Applications = 21)

% Patents Active = 95.4

CIPO Patents = 6

EPO Patents = 34 (Patent Applications = 39)

Average Co-Inventor Count = 3.1

ph-index = 27

Forward Citations = 3,110(Granted Patents)

Forward Citations (Not Self Cited) = 2,783(Dec 10, 2025)

Inventors with similar research interests:

🔬 See more inventors

Location History:

Carrboro, NC (US) (2018 - 2019)
Durham, NC (US) (2022)
Chapel Hill, NC (US) (2001 - 2024)

Company Filing History:

Macom Technology Solutions Holdings, Inc.

patents

4. 1 out of 132,107

Samsung Electronics Co., Ltd.

patents

where one patent can have more than one assignee

Years Active: 2001-2026

Loading Chart...

Areas of Expertise:

RF Amplifiers

Field Effect Transistors

Semiconductor Devices

High Electron Mobility Transistors

Nitride-Based Transistors

Modularized Designs

Multi-Zone Amplifiers

Humidity Robustness

SiC Substrates

Improved Linearity

Drain Current Drift

Packaging Solutions

108 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12708027 - Multilayer encapsulation for humidity robustness and highly accelerated stress tests and related fabrication methods (2026-08-11),

2. 12690254 - Metal pillar connection topologies for heterogeneous packaging (2026-07-21),

3. 12684852 - Field peak reduction in semiconductor devices with metal corner rounding (2026-07-14),

4. 12672302 - Barrier structure for dispersion reduction in transistor devices (2026-06-30),

5. 12598994 - Multilayer encapsulation for humidity robustness and related fabrication methods (2026-04-07),

6. 12575125 - Field effect transistor with selective modified access regions (2026-03-10),

7. 12563760 - Field reducing structures for nitrogen-polar group III-nitride semiconductor devices (2026-02-24),

8. 12531524 - Multi-zone radio frequency transistor amplifiers (2026-01-20),

9. 12500562 - RF amplifier devices and methods of manufacturing including modularized designs with flip chip interconnections (2025-12-16),

10. 12464759 - High electron mobility transistors having reduced drain current drift and methods of fabricating such devices (2025-11-04),

11. 12417966 - IPD components having SiC substrates and devices and processes implementing the same (2025-09-16),

12. 12408403 - Field effect transistor with stacked unit subcell structure (2025-09-02),

13. 12402348 - Field effect transistor with selective channel layer doping (2025-08-26),

14. 12266721 - Field effect transistor with multiple stepped field plate (2025-04-01),

15. 12224318 - Radio frequency transistor amplifiers having self-aligned double implanted source/drain regions for improved on-resistance performance and related methods (2025-02-11),

Title: Scott Thomas Sheppard: Pioneering Inventor in Semiconductor Technology

Introduction:

Scott Thomas Sheppard, an innovative inventor based in Carrboro, NC, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 88 patents, Sheppard continues to drive forward advancements in the industry.

Latest Patents:

Sheppard's latest patents showcase his expertise in the development of cutting-edge technologies. One notable invention is the "Field Effect Transistors with Modified Access Regions," which enhances transistor performance by incorporating a modified access region with specific material properties. Another groundbreaking patent is the "Packaging for RF Transistor Amplifiers," which revolutionizes how RF transistor amplifiers are integrated and optimized for performance.

Career Highlights:

Throughout his career, Sheppard has worked with renowned companies such as Cree GmbH and Wolfspeed, Inc. His innovative spirit and dedication to pushing the boundaries of semiconductor technology have earned him a reputation as a trailblazer in the industry.

Collaborations:

Sheppard has collaborated with esteemed professionals in the field, including Richard Peter Smith and Adam William Saxler. Together, they have combined their expertise to drive innovation and develop groundbreaking solutions that have transformed the semiconductor landscape.

Conclusion:

Scott Thomas Sheppard's relentless pursuit of innovation and his remarkable contributions to semiconductor technology have solidified his position as a visionary inventor. His ingenuity and collaborative spirit continue to inspire advancements in the industry, shaping the future of semiconductor technologies.