Scott Thomas Sheppard

USPTO Granted Patents = 99 (Patent Applications = 28)

CIPO Patents = 6

EPO Patents = 34 (Patent Applications = 37)

Average Co-Inventor Count = 3.1

ph-index = 27

Forward Citations = 3,021(Granted Patents)

Forward Citations (Not Self Cited) = 2,783(Oct 12, 2025)

Inventors with similar research interests:

Location History:

Carrboro, NC (US) (2018 - 2019)
Durham, NC (US) (2022)
Chapel Hill, NC (US) (2001 - 2024)

Company Filing History:

Macom Technology Solutions Holdings, Inc.

patents

4. 1 out of 131,214

Samsung Electronics Co., Ltd.

patents

Years Active: 2001-2025

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99 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 12464759 - High electron mobility transistors having reduced drain current drift and methods of fabricating such devices (2025-11-04),

2. 12417966 - IPD components having SiC substrates and devices and processes implementing the same (2025-09-16),

3. 12408403 - Field effect transistor with stacked unit subcell structure (2025-09-02),

4. 12402348 - Field effect transistor with selective channel layer doping (2025-08-26),

5. 12266721 - Field effect transistor with multiple stepped field plate (2025-04-01),

6. 12224318 - Radio frequency transistor amplifiers having self-aligned double implanted source/drain regions for improved on-resistance performance and related methods (2025-02-11),

7. 12191821 - Group III nitride-based monolithic microwave integrated circuits having multi-layer metal-insulator-metal capacitors (2025-01-07),

8. 12166003 - RF amplifier devices including top side contacts and methods of manufacturing (2024-12-10),

9. 12051669 - Contact and die attach metallization for silicon carbide based devices and related methods of sputtering eutectic alloys (2024-07-30),

10. 12034419 - RF amplifiers having shielded transmission line structures (2024-07-09),

11. 12034072 - Semiconductor devices having unit cell transistors with smoothed turn-on behavior and improved linearity (2024-07-09),

12. 11869964 - Field effect transistors with modified access regions (2024-01-09),

13. 11837457 - Packaging for RF transistor amplifiers (2023-12-05),

14. 11791389 - Radio frequency transistor amplifiers having widened and/or asymmetric source/drain regions for improved on-resistance performance (2023-10-17),

15. 11791385 - Wide bandgap transistors with gate-source field plates (2023-10-17),

Title: Scott Thomas Sheppard: Pioneering Inventor in Semiconductor Technology

Introduction:

Scott Thomas Sheppard, an innovative inventor based in Carrboro, NC, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 88 patents, Sheppard continues to drive forward advancements in the industry.

Latest Patents:

Sheppard's latest patents showcase his expertise in the development of cutting-edge technologies. One notable invention is the "Field Effect Transistors with Modified Access Regions," which enhances transistor performance by incorporating a modified access region with specific material properties. Another groundbreaking patent is the "Packaging for RF Transistor Amplifiers," which revolutionizes how RF transistor amplifiers are integrated and optimized for performance.

Career Highlights:

Throughout his career, Sheppard has worked with renowned companies such as Cree GmbH and Wolfspeed, Inc. His innovative spirit and dedication to pushing the boundaries of semiconductor technology have earned him a reputation as a trailblazer in the industry.

Collaborations:

Sheppard has collaborated with esteemed professionals in the field, including Richard Peter Smith and Adam William Saxler. Together, they have combined their expertise to drive innovation and develop groundbreaking solutions that have transformed the semiconductor landscape.

Conclusion:

Scott Thomas Sheppard's relentless pursuit of innovation and his remarkable contributions to semiconductor technology have solidified his position as a visionary inventor. His ingenuity and collaborative spirit continue to inspire advancements in the industry, shaping the future of semiconductor technologies.

This text is generated by artificial intelligence and may not be accurate.