The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 04, 2025
Filed:
Aug. 18, 2022
Macom Technology Solutions Holdings, Inc., Lowell, MA (US);
Kyle Bothe, Cary, NC (US);
Chris Hardiman, Cary, NC (US);
Elizabeth Keenan, Cary, NC (US);
Jia Guo, Apex, NC (US);
Fabian Radulescu, Chapel Hill, NC (US);
Scott Sheppard, Chapel Hill, NC (US);
MACOM Technology Solutions Holdings, Inc., Lowell, MA (US);
Abstract
A high electron mobility transistor comprises a semiconductor layer structure that includes a channel layer and a barrier layer and source and drain contacts on the semiconductor layer structure. A gate contact and a multi-layer passivation structure are provided on the semiconductor layer structure between the source contact and the drain contact. The multi-layer passivation structure comprises at least first and second silicon nitride layers that have different material compositions. A spacer passivation layer is provided on sidewalls of the first and second silicon nitride layers. A material composition of the spacer passivation layer is different than a material composition of at least one of the layers of the multi-layer passivation structure.