Durham, NC, United States of America

Jia Guo

This inventor holds 19 USPTO granted patents and 5 published patent applications, primarily in Transistor Technology. Top assignees: Wolfspeed, Inc., Semiconductor Components Industries, LLC, Macom Technology Solutions Holdings, Inc.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jia Guo. Retrieved from https://idiyas.com/inventor/jia-guo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19 

% Patents Active = 100.0

Average Co-Inventor Count = 3.5

ph-index = 2

Forward Citations = 33(Granted Patents)


Location History:

  • Durham, NC (US) (2017 - 2023)
  • Apex, NC (US) (2021 - 2023)

Company Filing History:


Years Active: 2017-2026

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Areas of Expertise:
Transistor
High-Electron Mobility
Radio Frequency Amplifiers
Barrier Structures
Field Effect Transistor
Drain Current Drift
Channel Layer Doping
Intrinsic Capacitance
On-Resistance Performance
Electron Concentration
Stacked Unit Subcell
Fabrication Methods
19 patents (USPTO):Explore Patents

Title: Innovations of Inventor Jia Guo

Introduction

Jia Guo is a prominent inventor based in Durham, NC, known for his significant contributions to the field of semiconductor technology. With a total of 14 patents to his name, Guo has made remarkable advancements that enhance the performance and reliability of transistors.

Latest Patents

One of his latest patents is titled "Transistor including a discontinuous barrier layer." This invention features a transistor that incorporates a first passivation layer on a semiconductor layer, strategically placed between a source contact and a drain contact. The first passivation layer includes a portion with a topological change, and a discontinuous barrier layer is added to reduce moisture ingress. Another notable patent is the "Field effect transistor with selective channel layer doping." This device includes a channel layer and a barrier layer, with source and drain contacts positioned on the barrier layer. The channel layer has a sub-layer with an increased doping concentration, which helps to minimize drain lag without significantly increasing gate lag.

Career Highlights

Throughout his career, Jia Guo has worked with leading companies in the semiconductor industry, including Wolfspeed, Inc. and Semiconductor Components Industries, LLC. His work has been instrumental in developing innovative solutions that address the challenges faced in semiconductor applications.

Collaborations

Guo has collaborated with several talented individuals in his field, including Scott Thomas Sheppard and Kyle Bothe. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Jia Guo's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to shape the future of transistor design and functionality.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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