The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2022

Filed:

Oct. 27, 2020
Applicant:

Wolfspeed, Inc., Durham, NC (US);

Inventors:

Kyle Bothe, Cary, NC (US);

Jia Guo, Apex, NC (US);

Terry Alcorn, Cary, NC (US);

Fabian Radulescu, Chapel Hill, NC (US);

Scott Sheppard, Chapel Hill, NC (US);

Assignee:

Wolfspeed, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01);
U.S. Cl.
CPC ...
H01L 29/407 (2013.01); H01L 29/402 (2013.01); H01L 29/408 (2013.01); H01L 29/41766 (2013.01); H01L 29/66431 (2013.01); H01L 29/66462 (2013.01); H01L 29/778 (2013.01); H01L 29/7783 (2013.01);
Abstract

A transistor device includes a semiconductor layer, a surface dielectric layer on the semiconductor layer, and at least a portion of a gate on the surface dielectric layer. The surface dielectric layer includes an aperture therein that is laterally spaced apart from the gate. The transistor device includes an interlayer dielectric layer on the surface dielectric layer, and a field plate on the interlayer dielectric layer. The field plate is laterally spaced apart from the gate, and at least a portion of the field plate includes a recessed portion above the aperture in the surface dielectric layer.


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