The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 07, 2025
Filed:
Apr. 29, 2022
Applicant:
Wolfspeed, Inc., Durham, NC (US);
Inventors:
Kyoung-Keun Lee, Cary, NC (US);
Jia Guo, Apex, NC (US);
Assignee:
Wolfspeed, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H10D 30/47 (2025.01); H10D 64/00 (2025.01);
U.S. Cl.
CPC ...
H01L 23/564 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H10D 30/475 (2025.01); H10D 64/111 (2025.01);
Abstract
A transistor includes a first passivation layer on a semiconductor layer of the transistor between a source contact and a drain contact. The first passivation layer includes a portion having a topological change. The transistor further includes a discontinuous barrier layer on the portion of the first passivation layer having the topological change. The discontinuous barrier layer is configured to reduce ingress of moisture in the portion of the first passivation layer.