The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 01, 2025

Filed:

Jun. 07, 2022
Applicant:

Wolfspeed, Inc., Durham, NC (US);

Inventors:

Jia Guo, New Hill, NC (US);

Kyle Bothe, Cary, NC (US);

Scott Sheppard, Chapel Hill, NC (US);

Assignee:

Wolfspeed, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 29/402 (2013.01); H01L 29/66431 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01);
Abstract

A transistor device according to some embodiments includes a semiconductor barrier layer, a surface dielectric layer on the semiconductor barrier layer, and a gate on the surface dielectric layer. The surface dielectric layer includes an aperture therein that is laterally spaced apart from the gate. The device includes an interlayer dielectric layer on the surface dielectric layer that extends over the gate and into the aperture in the surface dielectric layer, and a multiple-stepped field plate on the interlayer dielectric layer. The multiple-stepped field plate is laterally spaced apart from the gate. A recessed portion of the multiple-stepped field plate is above the aperture in the surface dielectric layer, and the multiple-stepped field plate includes a first step adjacent the recessed portion of the field plate on a side of the field plate opposite the gate, and a second step adjacent the first step.


Find Patent Forward Citations

Guo, Jia. (2025). Field effect transistor with multiple stepped field plate (U.S. Patent No. 12266721). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12266721

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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