The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 30, 2026

Filed:

Sep. 23, 2022
Applicant:

Wolfspeed, Inc., Durham, NC (US);

Inventors:

Jia Guo, New Hill, NC (US);

Kyle Bothe, Cary, NC (US);

Olof Tornblad, San Jose, CA (US);

Scott Sheppard, Chapel Hill, NC (US);

Assignee:

Wolfspeed, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/47 (2025.01); H10D 62/824 (2025.01); H10D 62/85 (2025.01); H10D 62/82 (2025.01); H10D 62/832 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H10D 62/824 (2025.01); H10D 62/8503 (2025.01); H10D 62/82 (2025.01); H10D 62/8325 (2025.01);
Abstract

Transistor devices are provided. In one example, the transistor device includes a channel layer. The transistor device includes a multilayer barrier structure on the channel layer. The multilayer barrier structure includes a first Group III-nitride layer and a second Group III-nitride layer on the first Group III-nitride layer and opposite to the channel layer. The first Group III-nitride layer has a thickness greater than a thickness of the second Group III-nitride layer. An aluminum concentration of the first Group III-nitride layer is at least two times greater than an aluminum concentration of the second Group III-nitride layer.


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