The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
May. 20, 2021
Wolfspeed, Inc., Durham, NC (US);
Kyle Bothe, Cary, NC (US);
Terry Alcorn, Cary, NC (US);
Dan Namishia, Wake Forest, NC (US);
Jia Guo, Apex, NC (US);
Matt King, Wake Forest, NC (US);
Saptharishi Sriram, Cary, NC (US);
Jeremy Fisher, Raleigh, NC (US);
Fabian Radulescu, Chapel Hill, NC (US);
Scott Sheppard, Chapel Hill, NC (US);
Yueying Liu, Cary, NC (US);
Wolfspeed, Inc., Durham, NC (US);
Abstract
A transistor device includes a semiconductor epitaxial layer structure including a channel layer and a barrier layer on the channel layer, a source contact and a drain contact on the barrier layer, an insulating layer on the semiconductor layer between the source contact and the drain contact, and a gate contact on the insulating layer. The gate contact includes a central portion that extends through the insulating layer and contacts the barrier layer and a drain side wing that extends laterally from the central portion of the gate toward the drain contact by a distance Γ. The drain side wing of the gate contact is spaced apart from the barrier layer by a distance dthat is equal to a thickness of the insulating layer. The distance Γis less than about 0.3 μm, and the distance dis less than about 80 nm.