Chris Hardiman

Title: Chris Hardiman: Innovator in High Electron Mobility Transistors

Introduction

Chris Hardiman is a notable inventor based in Morrisville, NC (US), recognized for his contributions to the field of semiconductor technology. With a total of nine patents to his name, Hardiman has made significant advancements in high electron mobility transistors (HEMTs), which are crucial for various electronic applications.

Latest Patents

Among his latest patents, Hardiman has developed a high electron mobility transistor that features a semiconductor layer structure comprising a channel layer and a barrier layer. This innovative design includes source and drain contacts, as well as a gate contact and a multi-layer passivation structure. The multi-layer passivation structure consists of at least two silicon nitride layers with different material compositions, enhancing the performance of the transistor. Another notable patent involves a plasma-based barrier layer removal method aimed at increasing peak transconductance while maintaining on-state resistance. This method includes a semiconductor structure with varying thicknesses of the barrier layer, optimizing the transistor's functionality.

Career Highlights

Throughout his career, Chris Hardiman has worked with prominent companies in the semiconductor industry, including Cree GmbH and Wolfspeed, Inc. His experience in these organizations has allowed him to refine his expertise in the development of advanced semiconductor devices.

Collaborations

Hardiman has collaborated with talented individuals in the field, including Fabian Radulescu and Kyle Bothe. These partnerships have contributed to the innovative projects he has undertaken.

Conclusion

Chris Hardiman's work in high electron mobility transistors showcases his dedication to advancing semiconductor technology. His patents reflect a commitment to innovation and excellence in the field.