The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 16, 2021
Filed:
Jun. 13, 2019
Applicant:
Cree, Inc., Durham, NC (US);
Inventors:
Kyle Bothe, Cary, NC (US);
Evan Jones, Durham, NC (US);
Dan Namishia, Wake Forest, NC (US);
Chris Hardiman, Morrisville, NC (US);
Fabian Radulescu, Chapel Hill, NC (US);
Jeremy Fisher, Raleigh, NC (US);
Scott Sheppard, Chapel Hill, NC (US);
Assignee:
Cree, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/101 (2006.01); H01L 21/338 (2006.01); H01L 29/778 (2006.01); H01L 23/48 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 21/76897 (2013.01); H01L 23/481 (2013.01); H01L 29/66462 (2013.01);
Abstract
A high electron mobility transistor (HEMT) includes a substrate comprising a first surface and a second surface on opposing sides of the substrate, a channel layer on the first surface of the substrate opposite the substrate, a barrier layer on the channel layer, a source contact comprising a first ohmic contact on an upper surface of the barrier layer, and a via extending from the second surface of the substrate to the first ohmic contact.