The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 06, 2021
Filed:
Aug. 29, 2019
Applicant:
Cree, Inc., Durham, NC (US);
Inventors:
Kyle Bothe, Cary, NC (US);
Evan Jones, Durham, NC (US);
Dan Namishia, Wake Forest, NC (US);
Chris Hardiman, Morrisville, NC (US);
Fabian Radulescu, Chapel Hill, NC (US);
Terry Alcorn, Cary, NC (US);
Scott Sheppard, Chapel Hill, NC (US);
Bruce Schmukler, Cary, NC (US);
Assignee:
Cree, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/101 (2006.01); H01L 21/338 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/40 (2006.01); H01L 29/45 (2006.01); H01L 21/306 (2006.01); H01L 21/765 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H03F 3/21 (2006.01); H03F 1/02 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 21/28575 (2013.01); H01L 21/30612 (2013.01); H01L 21/765 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/404 (2013.01); H01L 29/4175 (2013.01); H01L 29/452 (2013.01); H01L 29/66462 (2013.01); H03F 1/0205 (2013.01); H03F 3/21 (2013.01); H03F 2200/451 (2013.01);
Abstract
A power amplifier comprising a GaN-based high electron mobility transistor (HEMT) device, wherein a power added efficiency (PAE) of the power amplifier is greater than 32% at P1DB during operation of the power amplifier between 26.5 GHz and 30.5 GHz.