Elizabeth Keenan

Title: Elizabeth Keenan: Innovator in High Electron Mobility Transistors

Introduction

Elizabeth Keenan is a prominent inventor based in Cary, NC (US). She has made significant contributions to the field of semiconductor technology, particularly in the development of high electron mobility transistors. With a total of 2 patents to her name, her work has advanced the capabilities of electronic devices.

Latest Patents

Keenan's latest patents include innovative designs and methods for high electron mobility transistors. One of her patents focuses on a high electron mobility transistor that features a semiconductor layer structure, which includes a channel layer and a barrier layer, along with source and drain contacts. This design incorporates a gate contact and a multi-layer passivation structure, which consists of at least two silicon nitride layers with different material compositions. Additionally, a spacer passivation layer is strategically placed on the sidewalls of these layers to enhance performance.

Another notable patent addresses an encapsulation stack aimed at improving humidity performance. This invention includes a substrate with a semiconductor structure, a metallization layer with a non-planar surface, and a non-planar encapsulation layer. The design ensures that the encapsulation layer has a self-planarizing feature, which contributes to the reliability and efficiency of the transistor device.

Career Highlights

Throughout her career, Elizabeth Keenan has worked with leading companies in the semiconductor industry. Notable employers include Wolfspeed, Inc. and Macom Technology Solutions Holdings, Inc. Her experience in these organizations has allowed her to refine her skills and contribute to groundbreaking advancements in technology.

Collaborations

Keenan has collaborated with talented professionals in her field, including coworkers Kyle Bothe and Chris Hardiman. These collaborations have fostered an environment of innovation and creativity, leading to the successful development of her patents.

Conclusion

Elizabeth Keenan's contributions to the field of high electron mobility transistors demonstrate her expertise and commitment to innovation. Her patents reflect a deep understanding of semiconductor technology and its applications. Through her work, she continues to influence the future of electronic devices.