Macom Technology Solutions Holdings, Inc.

Wolfspeed, Inc.

Elizabeth Keenan

Kyle Bothe

Fabian Radulescu

Daniel Namishia

Chris Hardiman

A high electron mobility transistor comprises a semiconductor layer structure that includes a channel layer and a barrier layer and source and drain contacts on the semiconductor layer structure. A gate contact and a multi-layer passivation structure are provided on the semiconductor layer structure between the source contact and the drain contact. The multi-layer passivation structure comprises at least first and second silicon nitride layers that have different material compositions. A spacer passivation layer is provided on sidewalls of the first and second silicon nitride layers. A material composition of the spacer passivation layer is different than a material composition of at least one of the layers of the multi-layer passivation structure.

High electron mobility transistors having reduced drain current drift and methods of fabricating such devices

A transistor device includes a substrate, a semiconductor structure on the substrate, a metallization layer comprising a non-planar surface on a surface of the semiconductor structure, a non-planar encapsulation layer on the non-planar surface of the metallization layer, the non-planar encapsulation layer comprising a non-planar encapsulant surface that is opposite the non-planar surface, and a self-planarizing encapsulation layer on the non-planar encapsulation layer and comprising a planarized surface that is opposite the non-planar encapsulant surface.

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Cary, NC, United States of America

Elizabeth Keenan