The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 29, 2026

Filed:

Feb. 03, 2023
Applicant:

Wolfspeed, Inc., Durham, NC (US);

Inventors:

Fabian Radulescu, Chapel Hill, NC (US);

Basim Noori, San Jose, CA (US);

Scott Sheppard, Chapel Hill, NC (US);

Qianli Mu, San Jose, CA (US);

Jeremy Fisher, Raleigh, NC (US);

Dan Namishia, Wake Forest, NC (US);

Assignee:

Wolfspeed, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/82 (2025.01); H10W 20/43 (2026.01); H10W 72/20 (2026.01); H10W 72/90 (2026.01); H10W 90/00 (2026.01);
U.S. Cl.
CPC ...
H10D 84/82 (2025.01); H10W 20/43 (2026.01); H10W 72/9445 (2026.01); H10W 72/227 (2026.01); H10W 72/232 (2026.01); H10W 72/237 (2026.01); H10W 72/248 (2026.01); H10W 72/252 (2026.01); H10W 72/926 (2026.01); H10W 90/724 (2026.01);
Abstract

A transistor device includes a substrate and a plurality of transistor unit cells arranged in parallel on the substrate. Each of the transistor unit cells includes a source contact, a drain contact, and a gate finger between the source contact and the drain contact. The gate finger extends in a first direction and has a first end and a second end. The transistor device further includes a first solder bump on the transistor device that is within a periphery of the active region of the device and is electrically connected to the gate finger of a first one of the unit cells at a feed point that is between the first end and the second end of the gate finger.


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