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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11862719 B1

PDFFull Text
Date of Patent:
Jan. 02, 2024

Filed:

Dec. 16, 2020

Group iii-nitride high-electron mobility transistors with buried p-type layers and process for making the same

Applicant:

Cree, Inc., Durham, NC (US);

Inventors:

Saptharishi Sriram, Cary, NC (US);

Thomas Smith, Raleigh, NC (US);

Alexander Suvorov, Durham, NC (US);

Christer Hallin, Hillsborough, NC (US);

Assignee:

Wolfspeed, Inc., Durham, NC (US);

Attorney:

BakerHostetler

Primary Examiner:

John A Bodnar

Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/20 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01); H01L 29/40 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7786 (2013.01); H01L 29/1075 (2013.01); H01L 29/2003 (2013.01); H01L 29/402 (2013.01); H01L 29/41725 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H01L 29/7783 (2013.01); H01L 29/7787 (2013.01); H01L 29/1066 (2013.01); H01L 29/41766 (2013.01);
Abstract

An apparatus includes a substrate. The apparatus further includes a group III-nitride buffer layer on the substrate; a group III-nitride barrier layer on the group III-nitride buffer layer, the group III-nitride barrier layer including a higher bandgap than a bandgap of the group III-nitride buffer layer. The apparatus further includes a source electrically coupled to the group III-nitride barrier layer; a gate electrically coupled to the group III-nitride barrier layer; a drain electrically coupled to the group III-nitride barrier layer; and a p-region being at least one of the following: in the substrate or on the substrate below said group III-nitride barrier layer.

Find Patent Forward Citations

Sriram, Saptharishi. (2024). Group iii-nitride high-electron mobility transistors with buried p-type layers and process for making the same (U.S. Patent No. 11862719). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11862719

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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