The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 18, 2025

Filed:

Nov. 29, 2023
Applicant:

Wolfspeed, Inc., Durham, NC (US);

Inventors:

Saptharishi Sriram, Cary, NC (US);

Thomas J. Smith, Raleigh, NC (US);

Alexander Suvorov, Durham, NC (US);

Christer Hallin, Hillsborough, NC (US);

Assignee:

Wolfspeed, Inc., Durham, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H10D 30/01 (2025.01); H10D 30/47 (2025.01); H10D 62/17 (2025.01); H10D 62/85 (2025.01); H10D 64/00 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 30/475 (2025.01); H10D 30/015 (2025.01); H10D 30/4732 (2025.01); H10D 30/4755 (2025.01); H10D 62/357 (2025.01); H10D 62/8503 (2025.01); H10D 64/111 (2025.01); H10D 64/251 (2025.01); H10D 64/411 (2025.01); H10D 62/343 (2025.01); H10D 64/256 (2025.01);
Abstract

An apparatus includes a substrate. The apparatus further includes a group III-nitride buffer layer on the substrate; a group III-nitride barrier layer on the group III-nitride buffer layer, the group III-nitride barrier layer including a higher bandgap than a bandgap of the group III-nitride buffer layer. The apparatus further includes a source electrically coupled to the group III-nitride barrier layer; a gate electrically coupled to the group III-nitride barrier layer; a drain electrically coupled to the group III-nitride barrier layer; and a p-region being at least one of the following: in the substrate or on the substrate below said group III-nitride barrier layer.


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