Company Filing History:

10 out of 2,307

Cree Gmbh

where one patent can have more than one assignee

Years Active: 1998-2021

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18 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10892356 - Group III-nitride high-electron mobility transistors with buried p-type layers and process for making the same (2021-01-12),

2. 10840334 - Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same (2020-11-17),

3. 10192980 - Gallium nitride high-electron mobility transistors with deep implanted p-type layers in silicon carbide substrates for power switching and radio frequency applications and process for making the same (2019-01-29),

4. 9608085 - Predisposed high electron mobility transistor (2017-03-28),

5. 9306009 - Mix doping of a semi-insulating Group III nitride (2016-04-05),

6. 8492772 - Homoepitaxial growth of SiC on low off-axis SiC wafers (2013-07-23),

7. 7601986 - Epitaxial semiconductor structures having reduced stacking fault nucleation sites (2009-10-13),

8. 7531433 - Homoepitaxial growth of SiC on low off-axis SiC wafers (2009-05-12),

9. 7396410 - Featuring forming methods to reduce stacking fault nucleation sites (2008-07-08),

10. 7226805 - Sequential lithographic methods to reduce stacking fault nucleation sites (2007-06-05),

11. 7173285 - Lithographic methods to reduce stacking fault nucleation sites (2007-02-06),

12. 7109521 - Silicon carbide semiconductor structures including multiple epitaxial layers having sidewalls (2006-09-19),

13. 6093253 - Method and a device for epitaxial growth of objects by chemical vapor (2000-07-25),

14. 6048398 - Device for epitaxially growing objects (2000-04-11),

15. 6039812 - Device for epitaxially growing objects and method for such a growth (2000-03-21),

Title: The Innovations of Christer Hallin

Introduction

Christer Hallin is a prominent inventor based in Linköping, Sweden. He has made significant contributions to the field of semiconductor technology, particularly in the development of high-electron mobility transistors. With a total of 18 patents to his name, Hallin's work has had a substantial impact on various applications in electronics.

Latest Patents

Among his latest patents, Hallin has developed a groundbreaking apparatus that includes a substrate and a group III-nitride buffer layer. This apparatus features a group III-nitride barrier layer with a higher bandgap than that of the buffer layer. It also includes a source, gate, and drain that are electrically coupled to the barrier layer, along with a p-region located in the substrate or on the substrate below the barrier layer. Another notable patent involves gallium nitride high-electron mobility transistors that utilize deep implanted p-type layers in silicon carbide substrates. This innovation is aimed at enhancing power switching and radio frequency applications.

Career Highlights

Throughout his career, Hallin has worked with notable companies such as Cree GmbH and Norstel AB. His experience in these organizations has allowed him to refine his expertise in semiconductor technologies and contribute to various innovative projects.

Collaborations

Hallin has collaborated with esteemed colleagues, including Heinz Lendenmann and Saptharishi Sriram. These partnerships have fostered a collaborative environment that has led to the advancement of technology in their field.

Conclusion

Christer Hallin's contributions to the field of high-electron mobility transistors and his extensive patent portfolio highlight his role as a leading inventor in semiconductor technology. His work continues to influence advancements in electronics and power applications.

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