The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2009
Filed:
Jul. 14, 2005
Applicants:
Alexandre Ellison, Linköping, SE;
Christer Hallin, Herndon, VA (US);
Björn Magnusson, Linköping, SE;
Peder Bergman, Linköping, SE;
Inventors:
Alexandre Ellison, Linköping, SE;
Christer Hallin, Herndon, VA (US);
Björn Magnusson, Linköping, SE;
Peder Bergman, Linköping, SE;
Assignee:
Norstel AB, Norrköping, SE;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for producing, on an SiC substrate, SiC homoepitaxial layers of the same polytype as the substrate. The layers are grown on a surface of the SiC substrate, wherein the surface is inclined relative to the (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree. An homoepitaxial growth is started by forming a boundary layer with a thickness up to 1 μm.