Company Filing History:
Years Active: 2009-2013
Title: Peder Bergman: Innovator in SiC Technology
Introduction
Peder Bergman is a notable inventor based in Linköping, Sweden. He has made significant contributions to the field of semiconductor technology, particularly in the growth of silicon carbide (SiC) materials. With a total of 2 patents to his name, Bergman is recognized for his innovative approaches to enhancing SiC substrates.
Latest Patents
Bergman's latest patents focus on the homoepitaxial growth of SiC on low off-axis SiC wafers. The first patent describes a wafer that includes a SiC substrate with a surface inclined relative to a (0001) basal plane at an angle between 0.1 and 1 degree. This wafer features a SiC homoepitaxial device layer and a boundary layer with a thickness of up to 1 µm, which is grown under lower supersaturation conditions than the device layer, maintaining a C/Si ratio above 1. The second patent outlines a method for producing SiC homoepitaxial layers of the same polytype as the substrate. This method involves growing layers on a surface inclined at a similar angle, starting with a boundary layer of up to 1 µm in thickness.
Career Highlights
Bergman is currently employed at Norstel AB, a company known for its advancements in SiC technology. His work has been pivotal in improving the quality and efficiency of SiC substrates, which are essential for various electronic applications.
Collaborations
Throughout his career, Bergman has collaborated with notable colleagues, including Alexandre Ellison and Christer Hallin. These partnerships have contributed to the successful development of innovative technologies in the semiconductor industry.
Conclusion
Peder Bergman stands out as a key figure in the advancement of SiC technology, with his patents reflecting his commitment to innovation in the field. His contributions continue to influence the development of high-performance semiconductor materials.