Norstel Ab

Peder Bergman

Christer Hallin

Alexandre Ellison

Björn Magnusson

A wafer including a SiC substrate having a surface that is inclined relative to a (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree, a SiC homoepitaxial device layer, and a SiC homoepitaxial boundary layer having a thickness up to 1 &#x3bc;m arranged between the substrate and the device layer. The boundary layer has been grown on the substrate under an atmosphere of lower supersaturation than when forming the device layer and at a C/Si ratio above 1.

Homoepitaxial growth of SiC on low off-axis SiC wafers

A method for producing, on an SiC substrate, SiC homoepitaxial layers of the same polytype as the substrate. The layers are grown on a surface of the SiC substrate, wherein the surface is inclined relative to the (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree. An homoepitaxial growth is started by forming a boundary layer with a thickness up to 1 &#x3bc;m.

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Linköping, Sweden

Peder Bergman