The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 23, 2013
Filed:
Mar. 12, 2009
Alexandre Ellison, Linköping, SE;
Christer Hallin, Linköping, SE;
Björn Magnusson, Linköping, SE;
Peder Bergman, Linköping, SE;
Alexandre Ellison, Linköping, SE;
Christer Hallin, Linköping, SE;
Björn Magnusson, Linköping, SE;
Peder Bergman, Linköping, SE;
Norstel AB, Linköping, SE;
Abstract
A wafer including a SiC substrate having a surface that is inclined relative to a (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree, a SiC homoepitaxial device layer, and a SiC homoepitaxial boundary layer having a thickness up to 1 μm arranged between the substrate and the device layer. The boundary layer has been grown on the substrate under an atmosphere of lower supersaturation than when forming the device layer and at a C/Si ratio above 1.