The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 21, 2020
Filed:
Sep. 12, 2012
Michael John O'loughlin, Chapel Hill, NC (US);
Lin Cheng, Chapel Hill, NC (US);
Albert Augustus Burk, Jr., Chapel Hill, NC (US);
Anant Kumar Agarwal, Chapel Hill, NC (US);
Alexander Suvorov, Durham, NC (US);
Michael John O'Loughlin, Chapel Hill, NC (US);
Lin Cheng, Chapel Hill, NC (US);
Albert Augustus Burk, Jr., Chapel Hill, NC (US);
Anant Kumar Agarwal, Chapel Hill, NC (US);
Alexander Suvorov, Durham, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.