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For the Inventor, By the Inventor

Taoyuan, Taiwan

Win Semiconductors Corp.


USPTO Granted Patents = 101

% Expired Patents = 6.9

Trademarks = 1

Forward Citations = 104

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113 inventors (with patents filed for the assignee):

goldMedal Shu-Hsiao Tsai (19 out of 20 patents)

silverMedal Chih-Wen Huang (19 out of 22 patents)

bronzeMedal Chang-Hwang Hua (18 out of 18 patents)

4.  Cheng-Kuo Lin (17 out of 18 patents)

5.  Jui-Chieh Chiu (15 out of 15 patents)

6.  Chia-Ta Chang (12 out of 12 patents)

7.  Jung-Tao Chung (10 out of 10 patents)

8.  Rong-Hao Syu (9 out of 10 patents)

9.  Shinichiro Takatani (9 out of 9 patents)

10.  Chih-Feng Chiang (8 out of 8 patents)

11.  Re Ching Lin (7 out of 7 patents)

12.  Wen Chu (7 out of 7 patents)

13.  Cheng-Guan Yuan (7 out of 7 patents)

14.  Shih-Ming Joseph Liu (7 out of 7 patents)

15.  Jui-Pin Chiu (6 out of 6 patents)


Core Competencies:
Transistor Device
Power Amplifier
Acoustic Wave Resonator
Heterojunction Bipolar Transistor
Semiconductor Structure
Bulk Acoustic Wave Filter
Gallium Arsenide Circuit
Integrated Circuit
Thermal Sensing
Die Crack Detection
High-Frequency Package
Moisture Resistant Structure

101 patents:

1. 12727504 - Semiconductor structure (2026-09-01),
2. 12520533 - Transistor device and gate structure (2026-01-06),
3. 12431858 - Electronic structure and method of manufacturing the same (2025-09-30),
4. 12327802 - Semiconductor structure for die crack detection (2025-06-10),
5. 12308818 - Surface acoustic wave device (2025-05-20),
6. 12237382 - Semiconductor device and power amplifier (2025-02-25),
7. 12149049 - Vertical-cavity surface-emitting laser and method for forming the same (2024-11-19),
8. 12095231 - Vertical-cavity surface-emitting laser and method for forming the same (2024-09-17),
9. 12015074 - High electron mobility transistor and method for forming the same (2024-06-18),
10. 11990889 - Bulk acoustic wave resonator and formation method thereof (2024-05-21),
11. 11990537 - Heterojunction bipolar transistor and power amplifier (2024-05-21),
12. 11967613 - Semiconductor structure (2024-04-23),
13. 11949008 - Semiconductor structure and method for forming the same (2024-04-02),
14. 11791404 - Bipolar transistor and method for forming the same (2023-10-17),
15. 11695037 - Semiconductor structure (2023-07-04),
Company Overview
Win Semiconductors Corp., headquartered in Taoyuan, Taiwan, specializes in the development and manufacturing of advanced semiconductor devices. The company focuses on core technologies such as transistor devices, power amplifiers, and acoustic wave resonators, contributing significantly to the fields of telecommunications and consumer electronics. Win Semiconductors is recognized for its expertise in gallium arsenide circuits and integrated circuits, positioning itself as a key player in the semiconductor industry with a commitment to innovation and quality.
Profile summary synthesized from public USPTO records and patent filings.

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USPTO Data Jan 1 1976 - Oct 6 2026

101 Patents

#25 in Taoyuan

#237 in Taiwan

#7,712 in the World

Taoyuan, TW
Taoyuan, Taiwan

Win Semiconductors Corp.

Forward Citations = 104

113 inventors:

goldMedal Shu-Hsiao Tsai (19 out of 20 patents)

silverMedal Chih-Wen Huang (19 out of 22 patents)

bronzeMedal Chang-Hwang Hua (18 out of 18 patents)

4.  Cheng-Kuo Lin (17 out of 18 patents)

5.  Jui-Chieh Chiu (15 out of 15 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Win Semiconductors Corp.. Retrieved from https://idiyas.com/company/win-semiconductors

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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