The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
May. 16, 2023
Win Semiconductors Corp., Taoyuan, TW;
Ju-Hsien Lin, Taoyuan, TW;
Jung-Tao Chung, Taoyuan, TW;
Shu-Hsiao Tsai, Taoyuan, TW;
Hsi-Tsung Lin, Taoyuan, TW;
Chen-An Hsieh, Taoyuan, TW;
Yi-Han Chen, Taoyuan, TW;
Yao-Ting Shao, Taoyuan, TW;
WIN SEMICONDUCTORS CORP., Taoyuan, TW;
Abstract
A semiconductor structure includes a substrate, and an active device and a passive device over the substrate. The active device is disposed in a first region of the substrate, and the passive device is disposed in a second region of the substrate. The semiconductor structure further includes a shielding structure and a passivation layer. The shielding structure includes a barrier layer and a ceiling layer. The barrier layer is on the passive device and the active device, and the ceiling layer is on the barrier layer. The passivation layer is under the barrier layer and covers a top surface of the passive device. An air cavity is defined by sidewalls of the barrier layer, a bottom surface of the ceiling layer, and the substrate.