The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 06, 2026
Filed:
Oct. 17, 2022
Applicant:
Win Semiconductors Corp., Taoyuan, TW;
Inventors:
Chang-Hwang Hua, Taoyuan, TW;
Shu-Hsiao Tsai, Taoyuan, TW;
Rong-Hao Syu, Taoyuan, TW;
Chun-Han Song, Taoyuan, TW;
Pei-Ying Wu, Taoyuan, TW;
Zong-Zheng Yan, Taoyuan, TW;
Assignee:
WIN SEMICONDUCTORS CORP., Taoyuan, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 30/67 (2025.01); H01L 23/31 (2006.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01); H10D 64/01 (2025.01); H10D 64/64 (2025.01);
U.S. Cl.
CPC ...
H10D 30/675 (2025.01); H01L 23/3171 (2013.01); H10D 30/475 (2025.01); H10D 30/6738 (2025.01); H10D 62/85 (2025.01); H10D 64/01 (2025.01); H10D 64/64 (2025.01);
Abstract
A transistor device includes a substrate and a gate structure. The gate structure is disposed on the substrate. The gate structure includes a first metal layer and a refractory metal layer disposed on the first metal layer, wherein the first metal layer is disconnected and the refractory metal layer is disconnected.