Taoyuan, Taiwan

Chang-Hwang Hua

This inventor holds 18 USPTO granted patents and 3 published patent applications, primarily in Semiconductor Technology. Top assignee: Win Semiconductors Corp.. Active years: 2011-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Chang-Hwang Hua. Retrieved from https://idiyas.com/inventor/chang-hwang-hua

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 18 

% Patents Active = 88.9

Average Co-Inventor Count = 2.5

ph-index = 3

Forward Citations = 22(Granted Patents)


Location History:

  • Tao Yuan Shien, TW (2011 - 2018)
  • Tao Yuan, TW (2018 - 2024)

Company Filing History:


Years Active: 2011-2026

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Areas of Expertise:
Transistor Device
Gate Structure
Semiconductor Structure
pHEMTs
GaN Device
Wafer Distortion
High Temperature Resistance
Integrated Circuit
Backside Metallization
Metal Bumps
Die Strength
Electroless Plating
18 patents (USPTO):Explore Patents

Title: Celebrating the Innovations of Inventor Chang-Hwang Hua

Introduction: Chang-Hwang Hua, a prominent inventor based in Tao Yuan Shien, Taiwan, has made significant contributions to the field of semiconductor technology. With a total of 17 patents to his name, Hua's work continues to influence advancements in electronics and materials science.

Latest Patents: Among his recent innovations, Hua has developed pivotal patents that include a novel semiconductor structure and a method for its formation. This semiconductor structure features a substrate with a front and back side, alongside a first contact metal layer on the front side. The incorporation of a III-V compound semiconductor layer between the substrate and the contact metal layer marks a significant advancement. Moreover, Hua's design includes a via hole that penetrates through both the substrate and the semiconductor layer, showcasing his ingenuity in semiconductor design. Another noteworthy patent focuses on gate-sinking pseudomorphic high electron mobility transistors (pHEMTs). This invention involves a compound semiconductor substrate overlaid with multiple epitaxial layers, demonstrating Hua's expertise in creating devices with uniform electrical properties.

Career Highlights: Throughout his career, Chang-Hwang Hua has made impactful strides while working with esteemed companies, notably Win Semiconductors Corporation. His work within this organization has allowed him to refine his expertise in semiconductor technologies, laying the foundation for his notable patents and contributions to the industry.

Collaborations: Hua has collaborated with several distinguished professionals in his field, including Wen Chu and Shinichiro Takatani. These collaborations have undoubtedly enriched his innovative endeavors, leading to advancements in semiconductor structures and materials.

Conclusion: Chang-Hwang Hua stands out as a key figure in the realm of semiconductor innovation. With numerous patents to his credit and impactful collaborations, his work continues to shape the future of electronics. His contributions not only advance technology but also inspire the next generation of inventors in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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