The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 02, 2024

Filed:

Dec. 30, 2020
Applicant:

Win Semiconductors Corp., Taoyuan, TW;

Inventors:

Chang-Hwang Hua, Taoyuan, TW;

Chia-Hao Chen, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/778 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01);
Abstract

A semiconductor structure is provided. The semiconductor structure includes a substrate having a front side and a back side opposite the front side. The semiconductor structure also includes a first contact metal layer disposed on the front side of the substrate. The semiconductor structure further includes a III-V compound semiconductor layer disposed between the substrate and the first contact metal layer. Moreover, the semiconductor structure includes a via hole penetrating through the substrate and the III-V compound semiconductor layer from the back side of the substrate. The bottom of the via hole is defined by the first contact metal layer, and the first contact metal layer includes molybdenum, tungsten, iridium, palladium, platinum, cobalt, ruthenium, osmium, rhodium, rhenium, or a combination thereof.


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