The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Sep. 29, 2015
Applicant:
Win Semiconductors Corp., Taoyuan, TW;
Inventors:
Assignee:
WIN SEMICONDUCTORS CORP., Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/00 (2006.01); H01L 21/768 (2006.01); H01L 23/482 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/76858 (2013.01); H01L 21/76871 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 23/4827 (2013.01); H01L 21/76843 (2013.01); H01L 23/53238 (2013.01); H01L 2924/0002 (2013.01);
Abstract
An improved structure of backside copper metallization for semiconductor devices and a fabrication method thereof, wherein the improved structure comprises sequentially from top to bottom an active layer, a substrate, a backside metal seed layer, a high-temperature sustaining buffer layer, a backside metal layer and at least one oxidation resistant layer, wherein the backside metal seed layer contains Pd and P, the high-temperature sustaining buffer layer is made of Ni, Ag or Ni alloys, and the backside metal layer is made of Cu. The semiconductor chip using the structure provided by the present invention can sustain high-temperature operations.