The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 03, 2015
Filed:
Jul. 17, 2014
Win Semiconductors Corp., Kuei Shan Hsiang, Tao Yuan Shien, TW;
Chang-Hwang Hua, Tao Yuan Shien, TW;
Winson Shao, Tao Yuan Shien, TW;
Ben Hsu, Tao Yuan Shien, TW;
Wen Chu, Tao Yuan Shien, TW;
WIN SEMICONDUCTORS CORP., Kuei Shan Hsiang, Tao Yuan Shien, TW;
Abstract
A high breakdown voltage metal-insulator-metal capacitor for compound semiconductor integrated circuit comprises a substrate, an isolation layer, a first metal layer, a dielectric layer, an adhesion layer and a second metal layer. The dielectric layer is formed by alternately stacking plural HfOlayers and plural SiOlayers. The thickness of each layer of the plural HfOlayers is between 30 Å to 100 Å so as to reduce the leakage current, enhance the breakdown voltage and increase the capacitance density of each layer of the plural HfOlayers. And the total thickness of the dielectric layer is thicker than 500 Å such that the breakdown voltage of the capacitor is higher than 50 V.