The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 16, 2014

Filed:

Aug. 02, 2011
Applicants:

Jason Chen, Tao Yuan Shien, TW;

Nakano Liu, Tao Yuan Shien, TW;

Winson Shao, Tao Yuan Shien, TW;

Wen Chu, Tao Yuan Shien, TW;

Chang-hwang Hua, Tao Yuan Shien, TW;

Inventors:

Jason Chen, Tao Yuan Shien, TW;

Nakano Liu, Tao Yuan Shien, TW;

Winson Shao, Tao Yuan Shien, TW;

Wen Chu, Tao Yuan Shien, TW;

Chang-Hwang Hua, Tao Yuan Shien, TW;

Assignee:

Win Semiconductor Corp., Tao Yuan Shien, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05C 11/00 (2006.01); C23C 18/16 (2006.01); H01L 21/768 (2006.01); H01L 21/288 (2006.01);
U.S. Cl.
CPC ...
H01L 21/288 (2013.01); C23C 18/1619 (2013.01); H01L 21/76843 (2013.01); C23C 18/1666 (2013.01); C23C 18/1669 (2013.01);
Abstract

An electroless plating apparatus and method designed specifically for plating at least one semiconductor wafer are disclosed. The apparatus comprises a container, a wafer holder, an electrolyte supplying unit, and an ultrasonic-vibration unit. The container is provided with at least an inlet and used for containing electrolyte. The wafer holder is provided within the container. The electrolyte supplying unit is used to supply the electrolyte into the container via the inlet. The ultrasonic-vibration unit consisting of at least one frequency ultrasonic transducer is disposed in the container for producing a uniform flow of electrolyte in the container. Thereby, the wafers can be uniformly plated, especially for wafers with fine via-holes or trench structures.


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