The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2017

Filed:

Oct. 14, 2015
Applicant:

Win Semiconductors Corp., Kuei Shan Hsiang, Tao Yuan Shien, TW;

Inventors:

Chang-Hwang Hua, Tao Yuan Shien, TW;

Chih-Hsien Lin, Tao Yuan Shien, TW;

Assignee:

Win Semiconductor Corp., Guishan District, Taoyuan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/065 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/29 (2006.01); H01L 23/482 (2006.01); H01L 25/00 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 25/0657 (2013.01); H01L 23/291 (2013.01); H01L 23/3171 (2013.01); H01L 23/4827 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 25/50 (2013.01); H01L 23/481 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/48 (2013.01); H01L 24/73 (2013.01); H01L 24/92 (2013.01); H01L 2224/02372 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05548 (2013.01); H01L 2224/05558 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05568 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13109 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13609 (2013.01); H01L 2224/13611 (2013.01); H01L 2224/14181 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16148 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73207 (2013.01); H01L 2224/73257 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/92127 (2013.01); H01L 2225/0651 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06544 (2013.01); H01L 2225/06565 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01028 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/05042 (2013.01); H01L 2924/06 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/10329 (2013.01); H01L 2924/10335 (2013.01); H01L 2924/12036 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13051 (2013.01);
Abstract

A stacked structure comprises a semiconductor chip which includes a substrate having at least one substrate via hole penetrating through the substrate; at least one backside metal layer formed on a backside of the substrate covering an inner surface of the substrate via hole and at least part of the backside of the substrate; at least one front-side metal layer formed on the front-side of the substrate and electrically connected to the at least one backside metal layer on a top of at least one of the at least one substrate via hole; at least one electronic device formed on the front-side of the substrate and electrically connected to the at least one front-side metal layer; and at least one metal bump formed on at least one of the backside metal layer and the front-side metal layer.


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