The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 25, 2025
Filed:
May. 30, 2022
Win Semiconductors Corp., Taoyuan, TW;
Chieh-Chih Huang, Taoyuan, TW;
Yan-Cheng Lin, Taoyuan, TW;
Cheng-Kuo Lin, Taoyuan, TW;
Wei-Chou Wang, Taoyuan, TW;
Che-Kai Lin, Taoyuan, TW;
Jiun-De Wu, Taoyuan, TW;
WIN SEMICONDUCTORS CORP., Taoyuan, TW;
Abstract
A semiconductor device includes: a substrate; a channel layer disposed on the substrate, wherein the channel layer is made of GaN; a barrier layer disposed on the channel layer, wherein the barrier layer is made of AlGaN; and an inserting structure inserted between the channel layer and the barrier layer. The inserting structure includes: a first inserting layer disposed on the channel layer, wherein the first inserting layer is made of AlGaN; and a second inserting layer disposed on the first inserting layer, wherein the second inserting layer is made of AlGaN, and y is greater than x. The semiconductor device further includes: a gate electrode disposed on the barrier layer; a source electrode and a drain electrode disposed on the barrier layer and respectively at opposite sides of the gate electrode; and a spike region formed below at least one of the source electrode and the drain electrode.