The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2024
Filed:
Dec. 28, 2020
Applicant:
Win Semiconductors Corp., Taoyuan, TW;
Inventors:
Kuo-Lung Weng, Taoyuan, TW;
Chia-Ta Chang, Taoyuan, TW;
Tzu-Sheng Hsieh, Taoyuan, TW;
Chun-Ju Wei, Taoyuan, TW;
Assignee:
WIN SEMICONDUCTORS CORP., Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/17 (2006.01); H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/13 (2006.01);
U.S. Cl.
CPC ...
H03H 9/172 (2013.01); H03H 3/02 (2013.01); H03H 9/02015 (2013.01); H03H 9/131 (2013.01);
Abstract
A bulk acoustic wave resonator and a formation method thereof are provided. The method for forming the bulk acoustic wave resonator includes forming a sacrificial structure on a substrate. A seed layer is formed on the sacrificial structure. A bottom electrode is formed on the seed layer. A piezoelectric layer is formed on the bottom electrode. A top electrode is formed on the piezoelectric layer. The sacrificial structure is removed to form a cavity. The seed layer is etched through the cavity.