The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Jun. 01, 2022
Applicant:
Win Semiconductors Corp., Taoyuan, TW;
Inventors:
Chu-Lung Huang, Taoyuan, TW;
Pi-Hsia Wang, Taoyuan, TW;
Assignee:
WIN SEMICONDUCTORS CORP., Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/58 (2006.01); H10D 10/80 (2025.01); H10D 30/47 (2025.01); H10D 62/85 (2025.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 23/585 (2013.01); H10D 10/80 (2025.01); H10D 30/4732 (2025.01); H10D 62/85 (2025.01);
Abstract
A III-V semiconductor die for die crack detection is provided. The III-V semiconductor die includes a device area. The III-V semiconductor die further includes a doped semiconductor ring region. The doped semiconductor ring region surrounds the device area. At least one active device or at least one passive device is formed in the device area of the III-V semiconductor die.