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Taoyuan, Taiwan

Visual Photonics Epitaxy Co., Ltd.

USPTO Granted Patents = 25

Forward Citations = 198

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19 inventors (with patents filed for the assignee):

Yu-Chung Chin (19 out of 20 patents)

Chao-Hsing Huang (18 out of 19 patents)

Kun-Chuan Lin (8 out of 11 patents)

4. Kai-Yu Chen (6 out of 6 patents)

5. Min-Nan Tseng (6 out of 6 patents)

6. Van-Truong Dai (5 out of 5 patents)

7. Lung-Chien Chen (3 out of 3 patents)

8. Jin-Hsiang Liu (2 out of 3 patents)

9. Hui-Heng Wang (2 out of 2 patents)

10. Sun-Chin Wei (2 out of 2 patents)

11. Dong-Sing Wuu (2 out of 9 patents)

12. Man-Fang Huang (2 out of 2 patents)

13. Ray-Hua Horng (2 out of 3 patents)

14. Kuo-Hsiung Chang (2 out of 2 patents)

15. Wei-Chou Wang (1 out of 1 patent)

25 patents: Sort by Forward Citations

1. 12424822 - Semiconductor laser diode including multiple active layers and a grating layer (2025-09-23),

2. 12316076 - Vertical cavity surface emitting laser diode (VCSEL) with tunnel junction (2025-05-27),

3. 12295152 - High ruggedness heterojunction bipolar transistor (HBT) (2025-05-06),

4. 11929427 - High ruggedness heterojunction bipolar transistor (HBT) (2024-03-12),

5. 11862938 - Semiconductor laser diode (2024-01-02),

6. 11799011 - Semiconductor epitaxial wafer (2023-10-24),

7. 11721954 - Vertical cavity surface emitting laser diode (VCSEL) having AlGaAsP layer with compressive strain (2023-08-08),

8. 11482830 - Measurement method of reflection spectrum of vertical cavity surface emitting laser diode (VCSEL) and epitaxial wafer test fixture (2022-10-25),

9. 11158995 - Laser diode with defect blocking layer (2021-10-26),

10. 11133405 - High ruggedness heterojunction bipolar transistor (2021-09-28),

11. 11049936 - High ruggedness heterojunction bipolar transistor structure (2021-06-29),

12. 10818781 - Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer (2020-10-27),

13. 10651298 - Heterojunction bipolar transistor structure with a bandgap graded hole barrier layer (2020-05-12),

14. 9853136 - Directed epitaxial heterojunction bipolar transistor (2017-12-26),

15. 9130027 - High electron mobility bipolar transistor (2015-09-08),

Visual Photonics Epitaxy Co., Ltd. is a leading company in Taiwan specializing in compound semiconductor epitaxy, manufacturing and R&D of optoelectronic devices. With a strong focus on the development of high-quality and high-performance products, VISUAL PHOTONICS EPITAXY CO., LTD. aims to provide innovative solutions for various applications such as communication, sensing, and lighting. Headquartered in Taiwan, the company strives to meet customer demands while contributing to the advancement of the global optoelectronic industry.

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Company Badge

USPTO Data Jan 1 1976 - Dec 9 2025

25 Patents

#56 in Taoyuan

#666 in Taiwan

#24,910 in the World

Taoyuan, Taiwan

Visual Photonics Epitaxy Co., Ltd.

Forward Citations = 198

19 inventors:

Yu-Chung Chin (19 out of 20 patents)

Chao-Hsing Huang (18 out of 19 patents)

Kun-Chuan Lin (8 out of 11 patents)

4. Kai-Yu Chen (6 out of 6 patents)

5. Min-Nan Tseng (6 out of 6 patents)

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