The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2015
Filed:
Jul. 09, 2014
Visual Photonics Epitaxy Co., Ltd., Taoyuan, TW;
Yu-Chung Chin, New Taipei, TW;
Chao-Hsing Huang, Taipei, TW;
VISUAL PHOTONICS EPITAXY CO., LTD., Taoyuan, TW;
Abstract
A high electron mobility bipolar transistor including a substrate, a pseudomorphic high electron mobility transistor (pHEMT) sub structure, a sub collector/separating layer and a heterojunction bipolar transistor (HBT) sub structure sequentially stacked from bottom to top is disclosed. The sub collector/separating layer and the pHEMT sub structure are combined to form a pHEMT, and the sub collector/separating layer and the HBT sub structure are combined to form an HBT. The carbon concentration in the sub collector/separating layer is within 5×10cmand 1×10cm, and/or the oxygen concentration within 5×10cmand 1×10cm. The lattice during the process of epitaxy growth is stabilized and it is possible to prevent the dopants, the elements, the vacancies or the defects from diffusing into the neighboring layers, thereby improving the problem of mobility degradation and resistance increase, and sustaining the stability of the manufacturing process.