The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Jul. 17, 2020
Visual Photonics Epitaxy Co., Ltd., Taoyuan, TW;
VISUAL PHOTONICS EPITAXY CO., LTD., Taoyuan, TW;
Abstract
Provided is a vertical cavity surface emitting laser diode (VCSEL) with low compressive strain DBR layer, including a GaAs substrate, a lower DBR layer, a lower spacer layer, an active region, an upper spacer layer and an upper DBR layer. The lower or the upper DBR layer includes multiple low refractive index layers and multiple high refractive index layers. The lower DBR layer, the lower spacer layer, the upper spacer layer or the upper DBR layer contains AlGaAsP, where the lattice constant of AlGaAsPis greater than that of the GaAs substrate. This can moderately reduce excessive compressive strain due to lattice mismatch or avoid tensile strain during the epitaxial growth, thereby reducing the chance of deformation and bowing of the VCSEL epitaxial wafer or cracking during manufacturing. Additionally, the VCSEL epitaxial layer can be prevented from generating excessive compressive strain or tensile strain during the epitaxial growth.