The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2025
Filed:
Oct. 01, 2020
Visual Photonics Epitaxy Co., Ltd., Taoyuan, TW;
VISUAL PHOTONICS EPITAXY CO., LTD., Taoyuan, TW;
Abstract
Provided is a vertical cavity surface emitting laser diode (VCSEL). A tunnel junction with a high doping concentration is provided in the VCSEL. An n-type semiconductor layer of the tunnel junction has stress relative to the substrate, and is doped with at least one element such that the tunnel junction not only has a high doping concentration, but also the epitaxial layer can be oxidized and the oxidation rate is relatively stable during the oxidation process. Alternatively, the n-type semiconductor layer is doped with at least two elements. As a result, the oxidation process of the VCSEL can be stably performed, and the resistance of the tunnel junction with a high doping concentration is low. The tunnel junction is suitable to be arranged between two active layers of the VCSEL or between the p-type semiconductor and the n-type semiconductor layer of the VCSEL.