The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 25, 2022

Filed:

Sep. 08, 2020
Applicant:

Visual Photonics Epitaxy Co., Ltd., Taoyuan, TW;

Inventors:

Chao-Hsing Huang, Taoyuan, TW;

Yu-Chung Chin, Taoyuan, TW;

Van-Truong Dai, Vinhphuc province, VN;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/183 (2006.01); G01N 21/55 (2014.01); G01J 3/45 (2006.01);
U.S. Cl.
CPC ...
H01S 5/0042 (2013.01); G01J 3/45 (2013.01); G01N 21/55 (2013.01); H01S 5/18305 (2013.01);
Abstract

A measurement method for a vertical cavity surface emitting laser diode (VCSEL) and an epitaxial wafer test fixture are provided, especially the Fabry-Perot Etalon of the bottom-emitting VCSEL can be measured. When the Fabry-Perot Etalon of the bottom-emitting VCSEL is measured by a measurement apparatus, a light of the test light source of the measurement apparatus is incident from the substrate surface of the VCSEL epitaxial wafer such that the Fabry-Perot Etalon of the bottom-emitting VCSEL is acquired. Through the VCSEL epitaxial wafer test fixture, the bottom-emitting VCSEL can be directly measured by the existing measurement apparatus such that there is no need to change the optical design of the measurement apparatus, and it can prevent the VCSEL epitaxial wafer from being scratched or contaminated.


Find Patent Forward Citations

Loading…