The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
Feb. 10, 2024
Applicant:
Visual Photonics Epitaxy Co., Ltd., Taoyuan, TW;
Inventors:
Assignee:
VISUAL PHOTONICS EPITAXY CO., LTD., Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 10/80 (2024.12); H01L 23/66 (2005.12); H03F 3/19 (2005.12); H03F 3/21 (2005.12); H10D 62/13 (2024.12); H10D 62/824 (2024.12);
U.S. Cl.
CPC ...
H10D 10/80 (2024.12); H01L 23/66 (2012.12); H03F 3/19 (2012.12); H03F 3/21 (2012.12); H10D 62/137 (2024.12); H10D 62/824 (2024.12); H01L 2223/6644 (2012.12);
Abstract
Provided is a high ruggedness heterojunction bipolar transistor (HBT), including a substrate, a sub-collector layer, collector layer, a base layer, and an emitter layer. The collector layer includes a InGaP layer or a wide bandgap layer. The collector layer includes III-V semiconductor material. The bandgap of the wide bandgap layer is greater than that of GaAs.
Huang, Chao-Hsing. (2025). High ruggedness heterojunction bipolar transistor (hbt) (U.S. Patent No. 12295152). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12295152
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile