The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Sep. 28, 2022
Applicant:
Visual Photonics Epitaxy Co., Ltd., Taoyuan, TW;
Inventors:
Chien-Hung Pan, Taoyuan, TW;
Yu-Chung Chin, Taoyuan, TW;
Assignee:
VISUAL PHOTONICS EPITAXY CO., LTD., Taoyuan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/00 (2006.01); H01S 5/11 (2021.01); H01S 5/125 (2006.01); H01S 5/183 (2006.01); H01S 5/185 (2021.01); H01S 5/22 (2006.01); H01S 5/30 (2006.01); H01S 5/34 (2006.01); H01S 5/40 (2006.01); H01S 5/32 (2006.01); H01S 5/343 (2006.01);
U.S. Cl.
CPC ...
H01S 5/11 (2021.01); H01S 5/125 (2013.01); H01S 5/18305 (2013.01); H01S 5/18361 (2013.01); H01S 5/185 (2021.01); H01S 5/22 (2013.01); H01S 5/3095 (2013.01); H01S 5/3416 (2013.01); H01S 5/4043 (2013.01); H01S 5/3213 (2013.01); H01S 5/34313 (2013.01);
Abstract
Provided is a semiconductor laser diode including multiple active layers and a grating layer. The semiconductor laser diode includes two (or more than two) active layers, a grating layer, and a tunnel junction. The grating layer and the tunnel junction are provided between the two active layers. The tunnel junction is electrically connected to the two active layers, and the two active layers share and are optically coupled to the grating layer, thereby improving the external quantum efficiency and slope efficiency of the semiconductor laser diode.